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Foxconn to Build a Massive Factory in MexicoFoxconn Senior Vice President announced at the 2024 Hon Hai Tech Day that th...
14/10/2024

Foxconn to Build a Massive Factory in Mexico

Foxconn Senior Vice President announced at the 2024 Hon Hai Tech Day that the company plans to build the world’s largest NVIDIA GB200 chip manufacturing plant in Mexico. NVIDIA’s GB200 chip is manufactured using TSMC’s 4nm process, and Foxconn will leverage its advanced manufacturing technology to meet the growing demand in the AI market. Foxconn's Chairman stated that the company’s supply chain is well-prepared for the AI revolution.



  International IC&Component Exhibition And Conference2023Global Distribution and Supply Chain Leaders Summit
03/11/2023

International IC&Component Exhibition And Conference
2023Global Distribution and Supply Chain Leaders Summit

SK Hynix opposes, new uncertainty in the merger plan of Western Digital and KioxiaThe merger plan between NAND flash chi...
31/10/2023

SK Hynix opposes, new uncertainty in the merger plan of Western Digital and Kioxia

The merger plan between NAND flash chip manufacturer Kioxia and Western Digital (WD) is currently facing new uncertainty as SK Hynix has expressed its disagreement with the merger between the Japanese company Kioxia and the American company Western Digital. This introduces more uncertainty into the transaction between the Japanese and American storage chip companies.

SK Hynix is the world's second-largest memory chip manufacturer and is also a shareholder of Kioxia. In their latest Q3 financial report meeting, the company stated that the deal undervalues the worth of its stake. In their statement, SK Hynix pointed out that, considering the impact of this merger on the value of the company's investment assets, they have not agreed to it yet. It is worth noting that Western Digital, founded in 1970, is an American company specialized in the research and production of computer hard drives, solid-state drives, and storage chips, and it owns brands like SanDisk.

Kioxia, on the other hand, is a storage chip company that spun off from Toshiba's memory business in Japan. It was sold to a consortium led by Bain Capital in 2018, with SK Hynix being one of the consortium members. The acquisition stipulated that the largest shareholder, Bain Capital, must obtain the consent of investors such as SK Hynix to proceed with the merger.

Currently, major players in the storage chip sector include Samsung, Micron, Western Digital, SK Hynix, and Kioxia. According to data from TrendForce, Samsung holds over one-third of the market share in the NAND flash chip market, Kioxia's share is close to 19%, and Western Digital's share is 15%.

Western Digital and Kioxia have been discussing potential merger plans for years. These two companies are currently seeking to conclude negotiations by the end of this month and hope to announce the deal before Western Digital's financial report is released on October 30th. Kioxia had previously been in talks with Japan Investment Corp., seeking investment to expedite the transaction, but now SK Hynix has openly expressed opposition to the merger, introducing new uncertainties to the overall plan.

Surging CoWoS leads to TSMC's third addition of equipment orderChatGPT's popularity has fueled the demand for AI servers...
20/09/2023

Surging CoWoS leads to TSMC's third addition of equipment order

ChatGPT's popularity has fueled the demand for AI servers, especially for NVIDIA's AI GPU. To address the surging demand on CoWoS market and intensify competition, according to industrial news, from Q2 onwards, TSMC has added equipment orders for the third time.

Industrial insiders reveal that TSMC currently extends order visibility from Q2 2024 till the end of year. Some exclusive suppliers have even received orders up to 2025. International equipment giants such as Rudolph, Disco, SUS and ASMPT continually benefit from new orders, and beyond that, Scientech, GPTC and more Chinese Taiwan equipment manufacturers have also received the third wave of orders.

As estimated by equipment manufacturers, TSMC's total CoWoS production capacity will surpass 120,000 pieces in 2023, and skyrocket to 240,000 pieces in 2024, of which NVIDIA will take 144,000~150,000 pieces. At the online investor meeting in Q2 this year, TSMC said due to inadequate capacity and supply of CoWos, the demand might remain exceeding supply for a long time, it would keep scaling up production, and CoWos capacity would be doubled or more by 2024.

Automotive chips below 10 nm faces fierier competitionAccording to the report of Business Korea, the demand for advanced...
23/08/2023

Automotive chips below 10 nm faces fierier competition
According to the report of Business Korea, the demand for advanced high-performancesemiconductor products has surged due to the rapid transition to EV and self-driving vehiclesTraditionally, auto chips were fabricated with 30nm process node. As a result, they were notsuitable for mobile devices or PCs, but now automobile semiconductor industry has begun toadopt high-performance chips with central processing units (CPU). This transition is driven bythe progress of vehicle technology based on electronic devices such as self-driving and in-vehicle entertainment svstems, which drives the demand for high-performance semiconductorproducts.
Recently, many semiconductor manufacturers have taken action in the field of auto chips. Forexample, Samsung Electronics has secured a contract to provide Hyundai Motor with itsadvanced Exvnos Auto V920 chips for next-generation in-vehicle entertainment svstems. andsuch chips will be fabricated with 5nm process node and be launched in 2025. At the same timeTSMC recently has announced its plan to establish its first European fab in Germany, and willntroduce 12nm and 16nm process nodes. When TSMC's fab in Germany can produce autochips, it is expected that European automakers will reliably purchase chips within the range of10nm process node.

Nexperia Introduces New 600 V Single Tube IGBT for Outstanding Efficiency in Power ApplicationsNexperia, the essential s...
07/07/2023

Nexperia Introduces New 600 V Single Tube IGBT for Outstanding Efficiency in Power Applications

Nexperia, the essential semiconductor expert, today launched its entry to the insulated gate bipolar transistor (IGBT) market with a range of 600 V devices, starting with the 30 A NGW30T60M3DF. By adding IGBTs to its extensive portfolio, Nexperia is addressing the growing demand for efficient, high-voltage switching devices with a range of performance and cost requirements. These enable higher power density in power conversion and motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20 kW (20 kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters, uninterruptible power supply (UPS), photovoltaic (PV) strings, EV-charging, and induction heating and welding.

IGBT is a relatively mature technology. Nonetheless, the market for these devices is expected to grow in line with the increased adoption of solar panels and electric vehicle (EV) chargers. Nexperia's 600 V IGBTs feature a robust, cost-effective carrier-stored trench-gate advanced field-stop (FS) construction, providing exceptionally low conduction and switching loss performance with high levels of ruggedness in operating temperatures up to 175°C. This improves the efficiency and reliability of power inverters, induction heaters, welding equipment and industrial applications like motor drives and servos, robotics, elevators, operating grippers, and in-line manufacturing.

Designers can choose between the medium speed (M3) and high speed (H3) series IGBTs. These IGBTs have been designed with very tight parameter distributions, allowing multiple devices to connect safely in parallel. In addition, lower thermal resistance than competing devices enables them to provide higher output power. These IGBTs are also fully rated as soft fast reverse-recovery diodes. This means they are suitable for rectifier and bi-directional circuit applications or to protect against overcurrent conditions.

“With the release of these IGBTs, Nexperia provides designers with a greater choice of power-switching devices for a broad range of power applications”, according to Dr. Ke Jiang, General Manager Business Group Insulated-Gate Bipolar Transistors & Modules at Nexperia. “IGBTs are the ideal complement to Nexperia’s existing range of CMOS and wide-bandgap switching devices, making Nexperia a one-stop-shop for power electronics designers.”

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