09/14/2024
Concerning the subject of the MOSFETs used in CB / Export radios: (another one of my "mini-novel" length write-ups, but hopefully worth your time to read...)
First and foremost, the TO-220 case-style of MOSFETs which are used in virtually all CB and Export radios are / were NEVER specifically made for RF purposes., and is evidenced by the fact that there are absolutely NO specifications within their datasheets to back-up such claims for RF use.!
While on the contrary., when dealing with actual / real RF devices (whether BJT transistors, or Enhanced-mode MOSFETs)., right at the top of their respective datasheets., they will always CLEARLY state the three (3) main characteristics which are specifically intended for RF amplification purposes.!
1: Their RF operating frequency range (in Mhz) whether it's the HF, VHF, UHF, etc. frequency bands.
2: Their stated PEP wattage output at a stated voltage.
3: Their typical RF-gain factor given in dB (their "Gp" rating) which can then be easily converted (via chart) as to the ratio of output watts versus input watts.
BUT., the IRF-520, FQP-13N10, IRFZ-24N, etc., do NOT state even one of the above three (3) specifications., and are all designed to be nothing more than a high-speed "switch".!
The ONLY reason some of them DO work for RF power-amplification purposes (up at the 30 Mhz range) is because some of those "generic" switching MOSFETs have a fast enough on / off switching speed to then "pump" current (on and off) into an LC network (ie: "tank-circuit") to form a "clean" sine-wave at those frequencies.
These specs can be seen in their respective datasheets, and are listed as their "Turn-on Delay-Time" PLUS their "Rise-Time"., and also equally important., their "Turn-off Delay Time" PLUS their "Fall-Time". If those parameters are "fast-enough"., along with designing the correct "support-circuitry" around them, in order to "match" the MOSFETs input AND output capacitance (also spec-sheet listed)., it WILL work just fine.! :)
*Now yes., there certainly are some "fake" / "Bootleg", TO-220 case-style, MOSFET devices out there., BUT., sometimes the cause of getting poor-performance from your (designed for switch-mode application) MOSFET can be something entirely different, than it just simply being some type of fake / Bootleg device.!!
There's also another caveat / qualification that NEEDS to be addressed, and is why even some "genuine" / "real-deal" MOSFETs (even from a reputable / certified re-seller) that will operate at sub-par levels.!
This is because these originally NOT designed for RF / switching-type MOSFETs are intended to operate in the context of "switch-mode" circuits, in which the "Gate" of the MOSFET is typically "driven" at some quite high voltage levels in order to "reach" their full stated Rds (minimum stated resistance between the "Drain" and "Source" leads), and is why the maximum "Gate" voltage for most all of these devices is +/- 20v.
Virtually all of these MOSFETs have a datasheet stated "Rds" (when they reach their "saturation" point) of 10v., and in some situations (as in using them for RF circuits) is a LOT of voltage to reach, in order to also have them reach their maximum through-put current.!
*Remember., a BJT transistor is a "current-driven" device., while a MOSFET is a "voltage-driven" device.!!
I've had MANY "real-deal" MOSFETs here (IR, Vishay, Fairchild, etc.) from MAJOR country-wide "supply-houses" (pick your name.!) where most of the MOSFETs operated just fine., BUT., will occasional get a "batch" that just reacts "weak"., or what I like to call, a "soft, turn-on ramp".
This is because, although the MOSFET is within their datasheet specs., if the Rds voltage is at the "upper-end" of its factory stated 10v level., it will work., but it'll be with lack-luster results :(
The same goes for the stated "Vgs" (Gate Threshold Voltage) of the datasheets for all the above MOSFETs, which give a range of 2v to 4v., and that's a WIDE range (~100%.!) when compared to a BJT transistor, which is typically between 0.6 to 0.7v (~17%) depending on how "hard" one wants to "idle-current" the device.
Then to add another parameter "to-the-mix"., is that because a MOSFET is a voltage amplifying device (somewhat equivalent to a vacuum tube) there's also the factor of the "Gm" (Transconductance) rating of the MOSFET to consider (most datasheets do not specify it, because it's not a pertinent spec to their switch-mode applications)., which is the ratio of Gate voltage change versus the Drain current change.
And the manufactures of these CB / Export radios know (or should know.!) all of these things, and will pick / specify a "production-run" (from whatever company they purchase from) to get MOSFETs that have inherently lower Rds saturation voltage and higher Gm ratings.
*Now there is a "test-jig" that can be made to SAFELY test ("non-destructively") such a parameters, but that would be a whole other discussion... ;)
Bottom line.?? One can just purchase a large quantity of devices from a "reputable re-seller"., but I prefer to 1st purchase just a hand-full., testing them in "the-real-world" (or in my test-jig)., and if all is good., THEN and only then, will I purchase a large quantity from the same reseller, BUT the re-seller must also assure me, that I'll receive the same "lot" (ie: factory-run) so I know I'll be getting the same results.!! (y)
Hopefully my little "mini-novel" was of some value and understanding...
Regards / 73
Eric Klein
Klein Communications
Just as a "for-example" PS: I've installed a number of "the-real-deal" MOSFETs (ie: non-bootleg) in radios which have "dual-finals" (along with separate "bias trim-pots" for each final), in which if I would set Final #1 for an "idle-current" of even just 50ma., that once I would then attempt to bring Final #2 up to the same 50ma of idle current., that once that 2nd setting would get even above 25ma., then the pair of MOSFETs would just WAY over-shoot in current., which in some cases., would "jump" to a full Amp (or more) of current.! :(
*And here's a "factory-fresh" example: Some years back (8-9 years.?) I had received a brand-new / factory-fresh "case of 6", Ranger SS-3900-EGHP radios, in which EVERY radio (right from the factory) had the Dual-Finals set to only about 12ma each (24ma total) so I figured I would "set-them-right"., but boy was I mistaken.!
This is because, once I would set the 1st Final to even 25ma, and then attempted to set 2nd Final to the same (for a total of 50ma)., that once the 2nd Final got past about 15ma., the combined current would "shoot-to-the-moon" (over 600ma+)., and these were the factory-installed, clearly marked, "Vishay" brand of MOSFETs.
Conclusion.?? Whatever "batch-lot" of MOSFETs that the factory had purchased from Vishay (for that "run" of radios) were apparently (for whatever cause) ended-up being VERY "squirrely" in their behavior., and instead of just rejecting the MOSFETs, they (Ranger) decided to just factory-adjust the idle-currents all the way down to 12ma each (24ma total), which is just enough to keep the SSB transmissions somewhat clear-sounding., thereby "curing-the-problem"., and then simply, just "send-em-out-the-door".! :(