Beijing RealLight Technology Co., Ltd

Beijing RealLight Technology Co., Ltd Contact information, map and directions, contact form, opening hours, services, ratings, photos, videos and announcements from Beijing RealLight Technology Co., Ltd, Electronics, 5th Floor Block F No. 1 Building, No. 139 Jinghai 3rd Road, Beijing Development Area, Laguna Woods, CA.
(10)

RealLight Technology is a high-tech enterprise specializing in the research and development, manufacture and sales of diode lasers, microchip lasers, erbium glass lasers, high-energy solid-state lasers and laser accessories.

08/27/2026
Struggling with Raman fluorescence background? How can SERDS technology help?1. Raman SpectroscopyIn 1928, Indian physic...
08/27/2026

Struggling with Raman fluorescence background? How can SERDS technology help?
1. Raman Spectroscopy

In 1928, Indian physicist C.V. Raman discovered the Raman scattering effect. He found in experiments that when monochromatic light (typically laser light) irradiates a substance, photons undergo elastic collisions with molecules. This portion of scattered light has the same wavelength as the incident light and provides no useful information; this is called Rayleigh scattering. When photons undergo inelastic collisions with molecules, the wavelength of the scattered light changes relative to the incident light. This phenomenon is known as Raman scattering[1].

Figure 1. Schematic diagram of light scattering.

Figure 2. Energy-level diagram of Rayleigh and Raman scattering.

Raman scattered light is symmetrically distributed on both sides of Rayleigh scattered light, but its intensity is much lower than that of Rayleigh scattering, approximately 10⁻⁶ to 10⁻⁹ of the Rayleigh scattering intensity.

Figure 3. Schematic diagram of Raman peak parameter analysis.

A Raman spectrum consists of a certain number of Raman peaks, each representing the wavelength position and intensity of the corresponding Raman scattering. Each peak corresponds to a specific molecular bond vibration, such as C–C, C=C, C–H, etc., and also includes vibrations of groups composed of multiple chemical bonds.

Through molecular bond vibrations, the composition of a substance can be analyzed; changes in Raman peak positions can be used to determine some mechanical properties of the material under study; the intensity of Raman peaks reflects the total amount of the substance; the width of Raman peaks can indicate crystal quality; and the polarization of Raman peaks reflects the symmetry and orientation of crystals.

Generally speaking, Raman spectroscopy is a unique chemical fingerprint for specific molecules or materials, enabling rapid confirmation of material types as well as differentiation between different materials. Raman spectral databases contain thousands of spectra; through rapid searching, spectral data matching the substance being analyzed can be found.

2. Shifted Excitation Raman Difference Spectroscopy (SERDS)

When a sample is irradiated with laser light, Raman scattering can be excited, but fluorescence is also excited simultaneously. The intensity of Raman scattering is very weak, while the intensity of fluorescence is 106 to 108 times that of Raman scattered light. Therefore, fluorescence greatly affects the accuracy of Raman detection [2].

Fluorescence suppression methods and techniques are therefore particularly important. Currently commonly used fluorescence suppression methods mainly include fluorescence quencher methods, photobleaching methods, infrared/ultraviolet excitation methods, wavelet transform methods, polarization modulation methods, gating methods, etc. However, these methods all have more or less drawbacks. For example, the fluorescence quencher method introduces chemical substances that may cause sample contamination; the photobleaching method, through continuous irradiation of the sample, may cause photodamage/thermal damage to the sample, and so on.

Scientists have discovered another method: Shifted Excitation Raman Difference Spectroscopy (SERDS). SERDS uses two lasers with closely spaced wavelengths to excite the sample separately. According to Kasha's rule, small energy changes in excitation photons do not affect the fluorescence background, but they cause a shift in the Raman spectrum [3]. The Raman spectrum changes with the laser wavelength, while fluorescence barely changes with wavelength. By subtracting the spectra obtained after excitation with two closely spaced wavelengths, the resulting difference spectrum has its fluorescence background almost completely eliminated.

Figure 4. Left: Raman spectrum of a 784/785 nm dual-wavelength laser (schematic). Right: Raman spectrum after difference processing (schematic).

Comparing SERDS with the several fluorescence elimination methods mentioned above, SERDS is a non-destructive, chemically contact-free method that requires no sample pretreatment. It does not cause deviations in experimental data due to the polarization characteristics of the sample, and the analysis speed is also faster.

3. Applications of SERDS

SERDS has wide applications in fields such as chemistry, medicine, food, and environmental science. At the same time, SERDS can be used in combination with other spectroscopic techniques, such as Surface-Enhanced Raman Spectroscopy (SERS), Raman microscopy, Raman spectral imaging, etc.

In the environmental and food fields, samples often have strong fluorescence backgrounds, which greatly affects sample measurement. Measuring soil fertility indicators is of great significance to agriculture. Applying different fertilizers and pesticides according to different soil fertilities can greatly increase yield and also contribute to environmental protection to a certain extent. Kay Sowoidnich et al. used a 784/785 nm dual-wavelength laser to eliminate fluorescence interference in soil measurements and separate molecular fingerprint signals of minerals such as quartz and calcite from organic molecules [4]. At the same time, Sowoidnich K et al. used a 784/785 nm dual-wavelength laser to measure the molecular fingerprints of various components in livestock and poultry feed, selecting the most suitable feed for livestock and poultry to achieve optimal production performance and condition [5].

The 784.6 nm / 785.2 nm dual-wavelength SERDS system used by the Sowoidnich team employs an electronically controlled alternating modulation method. The experiment uses a λ₁ single-exposure – λ₂ single-exposure cyclic alternating acquisition scheme to avoid fluorescence drift and photobleaching caused by batch acquisition. The time interval between adjacent wavelength acquisitions is controlled within tens of milliseconds (20–100 ms), ensuring that the fluorescence baselines of the two measurements are approximately consistent.

4. Advantages of 784/785 nm Lasers for SERDS

Raman peaks change with the excitation wavelength, while fluorescence barely changes. Therefore, choosing lasers with closely spaced wavelengths at 784/785 nm can more clearly remove fluorescence interference, while not causing the Raman peak difference to be too low (which would prevent effective differencing) due to too small a wavelength difference, nor causing changes in the fluorescence spectrum due to too large a wavelength difference. Compared with lasers of other wavelength bands, the photon energy around 785 nm is lower, which reduces the total amount of fluorescence excited from the sample, facilitating difference calculations. At the same time, the wavelength of Raman light after 785 nm scattering is in the range of 830–1010 nm, which allows the use of cheaper silicon CCD acquisition equipment.

RealLight independently develops a full set of domestically produced Raman spectroscopy optical equipment, which can be used to build complete Raman analysis platforms. Its product portfolio covers NLSO single-mode and NLMO multi-mode conventional narrow-linewidth Raman laser modules, the dual-wavelength lasers developed for Shifted Excitation Raman Difference Spectroscopy (SERDS) technology, as well as supporting RL-RP series standardized Raman collection probe dedicated heat dissipation modules and customized filter optical accessories.

Figure 5. Schematic diagram of Raman probe structure.

Figure 6. RealLight standard Raman Probe parameters.

According to different application scenarios, this series provides two product forms: NLM series benchtop lasers and NLMO series embedded laser modules. Both have the same core optical performance, covering seven mainstream excitation bands: 532 nm, 638 nm, 785 nm, 808 nm, 830 nm, 981 nm, and 1064 nm. Using 105 μm / 0.22 NA fiber output, the output power range is 100–800 mW. Except for the 808 nm and 981 nm bands with linewidth < 0.3 nm, all other bands have spectral linewidth < 0.1 nm; wavelength stability is better than ±7 pm under 4 hours of continuous operation (±5 pm for 532 nm), power peak-to-peak fluctuation < ±2%, and side mode suppression ratio (SMSR) up to 40 dB or higher.

Figure 7. NLMO series multi-mode narrow-linewidth laser module and parameter table.

The NLM series is a benchtop complete machine form, equipped with a display screen, circuit system, heat dissipation module, and hardware emergency stop switch, supporting USB communication and 0–5 V analog modulation, suitable for laboratory benchtop Raman systems and industrial online detection equipment. The NLMO series is a miniature integrated module with typical power consumption < 5 W, suitable for integrated development of portable Raman equipment and OEM batch supporting.

Figure 8. NLM series multi-mode narrow-linewidth laser and parameter table.

Conventional single-wavelength lasers use VBG (Volume Bragg Grating) frequency-locking technology, featuring narrow output spectral linewidth and excellent long-term stability of wavelength and output power. They are suitable for conventional Raman qualitative characterization of samples with weak fluorescence interference, such as minerals and chemical raw materials. For complex systems such as soil and biological matrices that have strong autofluorescence and where conventional Raman signals are easily masked, the 784.5/785.5 nm dual-wavelength narrow-linewidth semiconductor laser module launched by RealLight provides the core excitation unit for SERDS detection solutions. The device integrates two independent constant-temperature frequency-locking optical paths within a single chassis, fully meeting the physical requirements of SERDS difference operations. The two laser channels support millisecond-level electronically controlled alternating switching, with switching delay controlled within 5 ms, achieving up to 100 Hz square-wave timing modulation, and are equipped with a hardware synchronization trigger interface that can achieve signal linkage with cooled CCD spectrometers and motorized XY translation stages. Using a short-interval cyclic acquisition mode to complete Raman data acquisition at two wavelengths, it effectively reduces the difference artifact peak interference caused by photobleaching of soil organic matter and fluorescence baseline drift during batch acquisition, improving data stability.

Figure 9. 784.5/785.5 nm laser physical image, parameter table, and measured spectrum.

This dual-wavelength series also provides two forms: benchtop complete machine (NLM dual-wavelength) and embedded module (NLMO dual-wavelength). The NLM dual-wavelength is equipped with a display screen, circuit system, heat dissipation module, and hardware emergency stop switch, suitable for laboratory benchtop SERDS system construction; the NLMO dual-wavelength module has typical power consumption < 5 W, suitable for portable differential Raman equipment integration.

Figure 10. NLMO series multi-mode dual-wavelength narrow-linewidth laser module and parameter table.

Figure 11. NLM series multi-mode dual-wavelength narrow-linewidth laser and parameter table.

Combining this dual-wavelength light source with the RL-RP series high-OD Raman probe and supporting isolation filter devices, a domestically produced SERDS difference Raman detection system can be constructed. The entire optical platform can perform millimeter-scale grid scanning tests on farmland surface soil. Through difference algorithms, the broad fluorescence background generated by humus is removed, completely separating the characteristic Raman peaks of typical soil components such as quartz, feldspar, calcite, anatase, and amorphous carbon. The entire set of equipment is independently manufactured domestically. Compared with imported dual-wavelength SERDS optical systems of the same type, it has shorter procurement cycles, lower post-maintenance costs, and hardware parameters that can be flexibly customized for different usage scenarios such as laboratory benchtop analysis and field portable in-situ screening, providing reliable domestic hardware support for SERDS technology research.

Disclaimer: Part of the content in this article comes from the Internet, for the purpose of technical research and exchange, and is for reference and study only. If there are errors in description or academic inaccuracies, please feel free to raise them in a timely manner. If copyright issues are involved, please contact us and we will verify and delete the content as soon as possible.

References

[1] Raman C V. A new radiation[J]. Indian Journal of Physics, 1928, 2: 387-398.

[2] Liu Y L, Mou T T, Chen S H. Review of research progress in shifted excitation Raman difference spectroscopy [J]. Laser & Optoelectronics Progress, 2024, 61(9): 0900003. DOI: 10.3788/LOP231206

[3] Lin J Y, Lin D, Qiu S F, et al. Shifted-excitation Raman difference spectroscopy for improving in vivo detection of nasopharyngeal carcinoma[J]. Talanta, 2023, 257: 124330.

[4] Sowoidnich K, Vogel S, Maiwald M, et al. Determination of Soil Constituents Using Shifted Excitation Raman Difference Spectroscopy[J]. Applied Spectroscopy, 2022, 76(6): 712-722. DOI: 10.1177/00037028211064907.

[5] Sowoidnich K, Oster M, Wimmers K, et al. Shifted excitation Raman difference spectroscopy as enabling technique for the analysis of animal feedstuff[J]. Journal of Raman Spectroscopy, 2021, 52(8): 1418-1427. DOI: 10.1002/jrs.6140.

Application Introduction of 350 ps Microchip Solid-State LaserThe microchip solid-state laser is ideally suited as a see...
08/21/2026

Application Introduction of 350 ps Microchip Solid-State Laser

The microchip solid-state laser is ideally suited as a seed source, with core advantages including narrow pulse width, high beam quality, pure pulse profile, and integration-friendly design.

I. Core Positioning & Technical Principles
- Type: Diode-pumped, passively Q-switched solid-state microchip laser.
- Seed Source Suitability: Specifically engineered to provide low-noise, highly stable, and narrow-pulse-width initial pulses for high-power and ultrafast laser systems, serving as the "pulse origin" in amplification chains.
- Structure: Integrates the pump module and laser crystal into a fully sealed, compact unit that is easy to integrate.

II. Key Seed Source Parameters (Predominantly 1064 nm Fundamental)

III. Core Advantages as a Seed Source
- Pure Pulse Without Tails: No trailing edges or parasitic pulses, resulting in a high signal-to-noise ratio after amplification.
- Narrow Pulse Width + High Peak Power: 300 ps-level pulse width enables MW-level peak power, ideal for picosecond/sub-nanosecond amplification chains.
- Integration-Friendly: OEM drive circuits, compact laser head, and support for internal/external triggering simplify system embedding.
- Multi-Wavelength Coverage: Fundamental plus second/third/fourth harmonics to suit various amplification and application scenarios.
- High Reliability: Fully sealed with no consumable parts, suitable for long-term industrial and research operations.

IV. Typical Application Scenarios (as a Seed Source)
- Picosecond/Sub-Nanosecond High-Power Lasers: e.g., HQF series lamp-pumped picosecond lasers directly use the microchip laser as the seed source.
- Lidar/Ranging: Provides narrow-pulse, high-repetition-rate seeds to improve ranging accuracy and resolution.
- Material Micro-Machining: Post-amplification for precision cutting, drilling, and scribing.
- Spectroscopy/Analysis: LIBS, LIF, Raman, etc., requiring narrow pulse width and high peak power excitation.
- Research Amplification Systems: Serves as a seed source for OPAs/OPCPAs and regenerative amplifiers.

V. Selection & Integration Considerations
- Wavelength Priority: 1064 nm is the fundamental; amplification followed by frequency conversion is more common. 532/355/266 nm can be used directly for specific band systems.
- Energy/Repetition Rate Matching: Select based on amplification gain and target repetition rate (e.g., 0.1 kHz/200 μJ suits low-repetition-rate, high-energy amplification).
- Supporting Solutions: The manufacturer provides seed source OEM driver boards, isolators, beam expanders, etc., to reduce integration difficulty.
- Triggering & Control: Supports internal/external triggering for system timing synchronization.

VI. Comparison with Competing Seed Sources
- Compared with fiber seed sources: The microchip laser offers narrower pulse width (300 ps vs. typical 1–10 ns), higher peak power, and no fiber nonlinear effects.
- Compared with solid-state Q-switched seed sources: The microchip laser is more compact, more highly integrated, delivers purer pulses, and offers better stability.
Disclaimer: Some content in this article is sourced from the internet for the purpose of technical research and exchange. It is intended for reference and learning only. If there are any inaccuracies or academic discrepancies, please feel free to provide feedback. For copyright concerns, please contact us, and we will promptly verify and remove any infringing content.

08/18/2026

OEM Integration with a 2940nm Er:YAG Laser Engine

The RealShock HQF Series provides a modular 2940nm Er:YAG laser source for medical equipment development and system integration. Its compact laser-module design is suitable for dental and skin-resurfacing equipment projects. Send your project requirements to discuss a suitable configuration.
LaserTechnology
Learn more:https://www.reallightlaser.com/pulse-lasers/realshock-hqf-series-lamp-pumped-long-pulse-laser/

Application of Microchip Lasers in Photoresist Repair             1. Photolithography ProcessPhotolithography machines a...
08/13/2026

Application of Microchip Lasers in Photoresist Repair

1. Photolithography Process

Photolithography machines are core equipment in the semiconductor industry, primarily used to fabricate microstructures on chips. They project patterns on photomasks onto silicon wafers and irradiate the wafer surface with ultraviolet light to form tiny microstructures[1].

A lithography machine consists of three major modules: optical system, mechanical system and control system. Equipped with exposure light sources, lenses, reflectors and other optical components, the optical system projects micro-patterns on photomasks onto silicon wafer surfaces. The mechanical system includes workpiece stages, motion control systems, automatic alignment systems and other devices to precisely adjust the position and motion trajectory of silicon wafers. The control system is composed of computers and supporting control software to realize unified scheduling of the overall machine operating status and exposure procedures. Among the three modules, the optical system is the core component of the lithography machine. Meanwhile, exposure and development are the two most critical processes in the entire lithography workflow.

Exposure refers to the process of projecting photomask patterns onto silicon wafers through the optical system. Photoresists are divided into positive and negative types (the schematic of negative photoresist is on the left, and positive photoresist on the right)[1]. Positive photoresists undergo photochemical reactions under ultraviolet irradiation; the exposed areas can be dissolved by developer, and the finally retained patterns correspond to the light-shielded regions of the photomask. Negative photoresists crosslink under UV irradiation, making exposed areas resistant to dissolution by developer, and the reserved patterns match the transparent regions of the photomask.

Development is a process that selectively dissolves photoresist with developer to form target patterns on the photoresist film. Developer is applied to the surface of exposed photoresist to selectively dissolve corresponding areas according to the photosensitive properties of photoresist. After cleaning and drying, patterned photoresist matching the photomask is formed. In the subsequent etching process, the photoresist acts as an etch barrier to etch the base film without photoresist protection, ultimately transferring patterns onto the wafer surface.

2. Photoresist Coating Methods and Resulting Defects

Both positive and negative photoresists play an irreplaceable role in lithography, so extremely high standards are required for photoresist coating.

There are four photoresist coating methods: manual coating, spin coating, spray coating and roll coating. Spin coating is the most widely used coating method at present, mainly due to the following advantages:

1. High coating uniformity; liquid can automatically pe*****te capillary pores of experimental substrates.

2. Short coating time, enabling rapid mass preparation of samples.

3. Capable of forming single-layer coatings on thin sheet materials.

Photoresist spin coating is a key pretreatment process before pattern exposure. The uniformity of spin-coated films directly determines the ex*****on effect of subsequent exposure processes and is a core factor affecting the molding quality of final lithographic patterns. The standard spin coating film-forming process is divided into three stages. First, the coating nozzle quantitatively sprays photoresist onto the center of the wafer. Then the wafer rotates at high speed, and centrifugal force spreads the central photoresist outward to the wafer edge, causing a bulge of accumulated photoresist at the edge. The thickness of photoresist film can be reduced by increasing the spin speed. Finally, the wafer keeps rotating at high speed, the solvent inside the film evaporates continuously, and a uniform and stable photoresist film is formed on the wafer surface.

Under conventional spin coating processes, the photoresist thickness along the wafer radius presents a typical "bowl-shaped" distribution: the film at the wafer center is slightly thicker, while the film in the middle area of the wafer is relatively uniform. Affected by centrifugal force and surface tension, obvious accumulated photoresist bulges (Edge Bead) form at the outermost edge of the wafer, and the edge film thickness is far higher than the standard film thickness. This radial fluctuation of film thickness will directly interfere with the focusing accuracy of subsequent lithography exposure and affect the stability of lithography processes. The thickness increase at the wafer center is slight and basically has no negative impact on exposure imaging. However, the problem of photoresist accumulation at the wafer edge is prominent, with thickness several times that of the standard process film. Excess residual photoresist at the edge easily spreads to the backside of the wafer, contaminates the wafer and affects the overall wafer process, as shown in the figure below.

Excess photoresist on the edge and backside of the wafer will not only damage coating and developing equipment, but also interfere with exposure machines, and even contaminate equipment outside the lithography area. In view of these severe impacts, a special Edge Bead Removal (EBR) process is required to remove excess edge photoresist to complete lithography and protect production equipment. EBR operation can be carried out after the photoresist on the wafer cures into a stable film.

3. Photoresist Edge Repair

Two common EBR solutions are adopted in the industry for photoresist edge repair, with respective advantages and drawbacks.

3.1 Chemical EBR

After coating and soft baking, Chemical EBR sprays edge removal solvents (PGMEA or EGMEA) onto the front, chamfer and back edge regions of the wafer. The coverage range of solvent must be strictly controlled during operation to avoid infiltration into the valid patterned area of photoresist[2]. This method dissolves edge films via solvent. In addition to stripping edge photoresist, it can simultaneously remove residual anti-reflective coating residues, process accumulated photoresist on the wafer front, chamfer and backside, and is compatible with all types of photoresists regardless of photosensitivity. However, fluid flow leads to uneven edge removal profiles, with hidden risks of solvent inward pe*******on damaging valid patterns. Dissolved photoresist debris easily causes particle contamination. Meanwhile, continuous consumption of high-purity organic solvents leads to relatively high costs for consumables and waste liquid treatment.

3.2 Optical EBR (Wafer Edge Exposure, WEE)

Optical EBR, also known as Wafer Edge Exposure (WEE), is arranged either after coating and soft baking before main pattern exposure, or after main pattern exposure. Lasers irradiate the wafer edge area to trigger photochemical reactions on the irradiated photoresist, which dissolves synchronously with exposed patterns in the subsequent development process[3]. Optical EBR requires no chemical solvents, maintains high cleanliness of the wafer surface, forms regular exposure boundaries, eliminates the risk of liquid-phase erosion on intact photoresist, and reduces single-wafer processing consumable costs. Its limitation lies in that it can only process photosensitive photoresists and cannot remove non-photosensitive anti-reflective coatings[4].

4. Optical Wafer Edge Exposure Process

The process stability of Optical EBR puts forward strict requirements for laser systems, and the selection of light source wavelength is critical. For mainstream i-line (365 nm) lithography processes, matched WEE schemes generally adopt 355 nm ultraviolet lasers. This wavelength matches the light absorption characteristics of commercial i-line photoresists well and can stably trigger target photochemical reactions. Meanwhile, 355 nm lasers feature mature industrialization, stable power output, low photoaging of optical components, and can reduce various defects induced by thin-film photodegradation and stray light. 266 nm deep ultraviolet lasers are only compatible with KrF (248 nm) photoresist systems and are not used for standard g/i-line processes. Direct matching with i-line photoresists will cause overexposure of the surface layer and insufficient photosensitivity of the bottom layer, leaving residual photoresist. In addition, lasers at this wavelength have low frequency-doubling conversion efficiency, limited service life of optical components, and a narrow overall process window.

To meet the light source demands of Optical EBR, RealLight independently developed the MCC series microchip lasers. The MCC RealSubns® microchip lasers feature ideal ultra-narrow pulse width and high single-pulse energy. As passively Q-switched diode pumped solid-state lasers, they deliver clean pulse waveforms without trailing pulses, stable single-pulse energy and excellent beam quality. The schematic diagram and physical photos are shown below.

The laser adopts a passively Q-switched design with bonded Nd:YAG and Cr:YAG crystals, consistent with the proprietary microchip laser technical route of RealLight. We have profound technical accumulation in relevant processes, enabling long service life, high stability and wide-temperature operation. A thermoelectric cooler is built inside the laser to maintain a constant internal operating temperature, adapting to high and low temperature environments.

The MCC series covers five wavelengths: 1064 nm, 532 nm, 355 nm, 266 nm and 213 nm. Microchip lasers from RealLight support internal and external triggering. Synchronous control based on external trigger mode facilitates linkage with wafer rotation and positioning systems. Lasers at 355 nm and 266 nm support repetition rates of 1 kHz, 5 kHz, 10kHz and 20 kHz, with maximum single-pulse energy of 20 μJ and a pulse width of 650 ps. The technical parameter table of microchip lasers is shown below. Meanwhile, we provide customized high-repetition-rate 355 nm and 266 nm lasers for photoresist repair applications, with repetition rates up to 20 kHz or 30 kHz.

With the continuous advancement of semiconductor process nodes, market demand for wafer photoresist edge repair (EBR) grows steadily. Featuring high reliability, compact size and low cost, RealLight’s products will continuously empower the technical iteration of Wafer Edge Exposure (WEE). Optical EBR technology is expected to alleviate pollution and consumable pressure brought by chemical solvents, optimize process defects at wafer edges, and boost quality and reduce costs for lithography processes. We look forward to its further development.

RealLight is a high-tech enterprise focusing on the R&D, production and sales of semiconductor lasers, microchip lasers, erbium glass lasers, high-power solid-state lasers and supporting optical components. Based on independent innovation, the company provides high-performance, high-reliability and customizable laser light sources and system solutions for radar ranging, analytical instruments, biomedicine, scientific research and laser processing fields, and supports one-stop OEM/ODM customization and development services.

Disclaimer

Part of the content of this document is sourced from the internet, intended only for technical research and communication, for reference and study. Please feel free to put forward suggestions if there are descriptive or academic errors. If any copyright issues are involved, contact us for verification and deletion as soon as possible.

References

[1] icguide. Step-by-Step Guide to the Working Principle of Lithography Machines [EB/OL]. 2024-04-12.

[2] Laura Peters. Edge Treatment Is Critical for Hard Masks[J]. Integrated Circuit Applications, 2007(10):29.

[3] Detailed Explanation of Semiconductor Photolithography Process. Electronic Fans. 2025-11-10.

[4] Wei Yiyi. Advanced Lithography Theory and Applications for VLSI. Beijing: Science Press, 2016:35-36, 39-40.

Address

5th Floor Block F No. 1 Building, No. 139 Jinghai 3rd Road, Beijing Development Area
Laguna Woods, CA

Alerts

Be the first to know and let us send you an email when Beijing RealLight Technology Co., Ltd posts news and promotions. Your email address will not be used for any other purpose, and you can unsubscribe at any time.

Contact The Business

Send a message to Beijing RealLight Technology Co., Ltd:

Shortcuts

Share

Category